Nano's new 4.5kW server power solution is officially released

Torrance, CA, July 25, 2024 - Nanometer Semiconductor (NASDAQ: NASDAQ), the industry leader in next-generation GaNFast™ Gallium nitride power chips and GeneSiC™ silicon carbide power devices NVTS (NVTS) today announced a new CRPS185 4.5kW AI data center server power solution built around Nanomicro's GaNSafe™ high-power gallium nitride power chip and GeneSiC™ third-generation fast silicon carbide power device that offers the world's highest power density of 137W/in³ and over 97% efficiency.

Next-generation AI Gpus, such as the Nvidia Blackwell B100 and B200, each require more than 1kW of power support for high-power computing, three times that of traditional cpus. With the rising power demand, the power specification of each data center cabinet will be pushed up from 30-40kW to 100kW.

In March 2024, Nano Semiconductor released its AI data center Power Technology roadmap, demonstrating its next-generation data center power solutions for the growing power demands of AI and high performance computing (HPC) systems. The first design is a CRPS185 3.2kW AC-DC converter based on GaNSafe™ gallium nitride power chip, based on the Universal redundant Power Supply (CRPS) form factor defined by the Hyperscale Open Compute Project (OCP). Compared to traditional silicon-based solutions of the same power class, the CRPS185 3.2kW solution (with a length of 185mm) has a 40% reduction in volume and an efficiency of over 96% (titanium +) at 20% to 60% load, easily exceeding the "titanium" efficiency benchmark that is critical to the data center operating model and mandated by EU regulations.

The new CRPS185 4.5kW power solution demonstrates how the new GaNSafe™ gallium nitride power chip and GeneSiC's third-generation fast silicon carbide MOSFETs create the world's most power dense and efficient power solution. The core of the solution is a hybrid design of silicon carbide technology and gallium nitride technology, in which silicon carbide technology is deployed on a staggered CCM totem pole PFC, combined with a full-bridge LLC topology equipped with gallium nitride technology. Hybrid designs leverage the unique advantages of each semiconductor technology to achieve the highest frequencies, lowest operating temperatures, better reliability and robustness, and thus the highest power density and efficiency. Nano's 650V third-generation fast silicon carbide MOSFETs incorporate "grooved auxiliary planar gate" technology, enabling them to deliver maximum system efficiency and reliability for real-world applications at varying temperatures.